Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US11430907B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Thomas Lehnhardt · Regensburg, DE
• Jürgen Off · Regensburg, DE
• Joachim Hertkorn · Neukirchen, DE

Key dates

• Filing date: Mar 19, 2021
• Grant date: Aug 30, 2022
• Expiry date: Mar 19, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/036
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.