Photomask and method of fabricating a photomask
US11435660B2 · kind B2 · utility
1Cited by
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20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 30, 2018 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Jul 20, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.