Self-aligned contact and contact over active gate structures
US11437273B2 · kind B2 · utility
1Cited by
6References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Feb 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.