Method for manufacturing semiconductor device and semiconductor device thereby formed
US11437281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | May 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for manufacturing semiconductor device and a semiconductor device formed using same. The method includes: preparing a substrate; forming a pad oxide layer and a barrier layer on the substrate, the barrier layer is disposed on the pad oxide layer; forming a plurality of shallow trench isolation structures in the substrate to form multiple regions in the substrate; removing a part of the barrier layer to form a recess, the recess is set in any one of the multiple regions, and a region directly below the recess is defined as a high voltage device region; and forming a gate oxide layer in the recess, and removing the barrier layer. The method provided in the present disclosure simplifies the manufacturing process and reduces the production costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.