Contact over active gate structure
US11437284B2 · kind B2 · utility
1Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2019 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Oct 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.