Patent · US Active

Semiconductor module and method for producing the same

US11437311B2 · kind B2 · utility

1Cited by

5References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Olaf Hohlfeld · Warstein, DE
Peter Kanschat · Soest, DE

Key dates

Filing date	Nov 18, 2020
Grant date	Sep 6, 2022
Priority date	—
Expiry date	Dec 4, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1815
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a power semiconductor module arrangement includes arranging two or more individual semiconductor devices on a base layer, each semiconductor device including a lead frame, a semiconductor body arranged on the lead frame, and a molding material enclosing the semiconductor body and at least part of the lead frame, arranging a frame on the base layer such that the frame surrounds the two or more individual semiconductor devices, and filling a first material into a capacity formed by the base layer and the frame, and hardening the first material to form a casting compound that at least partly fills the capacity, thereby at least partly encloses the two or more individual semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.