Silicon carbide semiconductor component

US11437470B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Basler · Riemerling, DE
• Rudolf Elpelt · Erlangen, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: May 17, 2019
• Grant date: Sep 6, 2022
• Expiry date: Jul 4, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

The disclosure relates to a semiconductor component having an SiC semiconductor body and a first load terminal on a first surface of the SiC semiconductor body. A second load terminal is formed on a second surface of the SiC semiconductor body opposite the first surface. The semiconductor component has a drift zone of a first conductivity type in the SiC semiconductor body and a first semiconductor area of a second conductivity type which is electrically connected to the first load terminal. A pn junction between the drift zone and the first semiconductor area defines a voltage blocking strength of the semiconductor component.