Gate structures in transistors and method of forming same
US11437474B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Oct 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.