Gate-all-around integrated circuit structures having dual nanoribbon channel structures

US11437483B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Tanuj Trivedi · Hillsboro, US
• Rahul Ramaswamy · Portland, US
• Jeong Dong Kim · Scappoose, US
• Babak Fallahazad · Portland, US
• Hsu-Yu Chang · Hillsboro, US
• Ting Chang · Portland, US
• Nidhi Nidhi · Hillsboro, US
• Walid M. Hafez · Portland, US

Key dates

• Filing date: Mar 5, 2020
• Grant date: Sep 6, 2022
• Expiry date: Mar 5, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, are described. For example, an integrated circuit structure includes a first vertical arrangement of nanowires above a substrate. A dielectric cap is over the first vertical arrangement of nanowires. A second vertical arrangement of nanowires is above the substrate. Individual ones of the second vertical arrangement of nanowires are laterally staggered with individual ones of the first vertical arrangement of nanowires and the dielectric cap.