Inventor · Hillsboro, OR, US

Tanuj Trivedi

12Patents
1h-index
14Co-inventors
40Inventor score

Filing activity: Dec 13, 2019 → Nov 15, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US11094782B1 Gate-all-around integrated circuit structures having depopulated channel structures Electricity 2 Active
US11437483B2 Gate-all-around integrated circuit structures having dual nanoribbon channel structures Electricity 1 Active
US11581404B2 Gate-all-around integrated circuit structures having depopulated channel structures Electricity 0 Active
US11791380B2 Single gated 3D nanowire inverter for high density thick gate SOC applications Electricity 0 Active
US12369358B2 Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices Electricity 0 Active
US12089411B2 Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices Electricity 0 Active
US11862703B2 Gate-all-around integrated circuit structures having dual nanoribbon channel structures Electricity 0 Active
US12249622B2 Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications Electricity 0 Active
US11996403B2 ESD diode solution for nanoribbon architectures Electricity 0 Active
US12349411B2 Gate-all-around integrated circuit structures having dual nanoribbon channel structures Electricity 0 Active
US12317585B2 Adjacent gate-all-around integrated circuit structures having non-merged epitaxial source or drain regions Electricity 0 Active
US12040395B2 High voltage extended-drain MOS (EDMOS) nanowire transistors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.