Tanuj Trivedi
12Patents
1h-index
14Co-inventors
40Inventor score
Filing activity: Dec 13, 2019 → Nov 15, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11094782B1 | Gate-all-around integrated circuit structures having depopulated channel structures | Electricity | 2 | Active |
| US11437483B2 | Gate-all-around integrated circuit structures having dual nanoribbon channel structures | Electricity | 1 | Active |
| US11581404B2 | Gate-all-around integrated circuit structures having depopulated channel structures | Electricity | 0 | Active |
| US11791380B2 | Single gated 3D nanowire inverter for high density thick gate SOC applications | Electricity | 0 | Active |
| US12369358B2 | Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices | Electricity | 0 | Active |
| US12089411B2 | Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices | Electricity | 0 | Active |
| US11862703B2 | Gate-all-around integrated circuit structures having dual nanoribbon channel structures | Electricity | 0 | Active |
| US12249622B2 | Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications | Electricity | 0 | Active |
| US11996403B2 | ESD diode solution for nanoribbon architectures | Electricity | 0 | Active |
| US12349411B2 | Gate-all-around integrated circuit structures having dual nanoribbon channel structures | Electricity | 0 | Active |
| US12317585B2 | Adjacent gate-all-around integrated circuit structures having non-merged epitaxial source or drain regions | Electricity | 0 | Active |
| US12040395B2 | High voltage extended-drain MOS (EDMOS) nanowire transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.