Doped gate dielectrics materials
US11437485B2 · kind B2 · utility
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3References
21Claims
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Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | Dec 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.