Non-conformal capping layer and method forming same
US11437491B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2020 |
| Grant date | Sep 6, 2022 |
| Priority date | — |
| Expiry date | May 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.