Field-effect transistors with a polycrystalline body in a shallow trench isolation region

US11437522B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Michel J. Abou-Khalil · South Burlington, US
• Steven M. Shank · Jericho, US
• Mark D. Levy · Williston, US
• Rajendran Krishnasamy · South Burlington, US
• John J. Ellis-Monaghan · Grand Isle, US
• Anthony K. Stamper · Williston, US

Key dates

• Filing date: Jun 2, 2020
• Grant date: Sep 6, 2022
• Expiry date: Jun 4, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A shallow trench isolation region is formed in a semiconductor substrate. A trench is formed in the shallow trench isolation region, and a body region is formed in the trench of the shallow trench isolation region. The body region is comprised of a polycrystalline semiconductor material.