Inventor · Williston, VT, US

Mark D. Levy

59Patents
3h-index
67Co-inventors
69Inventor score

Filing activity: Jan 22, 1996 → Apr 11, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7823106B2 Variable performance ranking and modification in design for manufacturability of circuits Emerging Cross-Sectional Technologies 25 Active
US5664958A Electrical connector for worn electrical outlets Electricity 13 Expired
US8729664B2 Discontinuous guard ring Electricity 5 Active
US9059233B2 Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region Electricity 3 Active
US7060626B2 Multi-run selective pattern and etch wafer process Electricity 3 Expired
US7037824B2 Copper to aluminum interlayer interconnect using stud and via liner Electricity 2 Expired
US9231089B2 Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region Electricity 2 Active
US11316064B2 Photodiode and/or PIN diode structures Emerging Cross-Sectional Technologies 2 Active
US7087997B2 Copper to aluminum interlayer interconnect using stud and via liner Electricity 2 Expired
US11152520B1 Photodetector with reflector with air gap adjacent photodetecting region Electricity 1 Active
US11469225B2 Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientation Electricity 1 Active
US11972999B2 Unlanded thermal dissipation pillar adjacent active contact Electricity 1 Active
US11049932B2 Semiconductor isolation structures comprising shallow trench and deep trench isolation Electricity 1 Active
US11536914B2 Photodetector array with diffraction gratings having different pitches Physics 1 Active
US10312356B1 Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions Electricity 1 Active
US11422303B2 Waveguide with attenuator Physics 1 Active
US11437522B2 Field-effect transistors with a polycrystalline body in a shallow trench isolation region Electricity 1 Active
US11923446B2 High electron mobility transistor devices having a silicided polysilicon layer Electricity 1 Active
US11282740B2 Bulk semiconductor structure with a multi-level polycrystalline semiconductor region and method Electricity 1 Active
US12040252B2 Microfluidic channels sealed with directionally-grown plugs Electricity 0 Active
US12411105B2 Semiconductor structure with frontside port and cavity features for conveying sample to sensing element Performing Operations; Transporting 0 Active
US11567277B1 Distributed Bragg reflectors including periods with airgaps Physics 0 Active
US12342626B2 Switches in bulk substrate Electricity 0 Active
US12389622B2 High electron mobility transistor devices having a silicided polysilicon layer Electricity 0 Active
US11978661B2 Ultralow-K dielectric-gap wrapped contacts and method Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.