Patent · US Active

Memory cell, memory cell arrangement, and methods thereof

US11443792B1 · kind B1 · utility

9Cited by

6References

25Claims

0Family size

Assignee

Ferroelectric Memory GmbH · DE

Inventors

Rashid Iqbal · Houston, US
Stefano Sivero · Somma Lombardo, IT
Stefan Müller · Wetzlar, DE

Key dates

Filing date	Aug 12, 2021
Grant date	Sep 13, 2022
Priority date	—
Expiry date	Aug 12, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10B51/30
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Various aspects relate to a memory cell including: a field-effect transistor memory structure, wherein a source/drain current through the field-effect transistor memory structure is a function of a gate voltage supplied to a gate of the field-effect transistor memory structure and a memory state in which the field-effect transistor memory structure is residing in; and an access device coupled to the gate of the field-effect transistor memory structure, wherein the access device is configured to control a voltage present at the gate of the field-effect transistor memory structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.