Thin film barrier seed metallization in magnetic-plugged through hole inductor
US11443885B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2018 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jan 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F2017/002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments include inductors and methods of forming inductors. In an embodiment, an inductor may include a substrate core and a conductive through-hole through the substrate core. Embodiments may also include a magnetic sheath around the conductive through hole. In an embodiment, the magnetic sheath is separated from the plated through hole by a barrier layer. In an embodiment, the barrier layer is formed over an inner surface of the magnetic sheath and over first and second surfaces of the magnetic sheath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.