Silicon on insulator structure and method of making the same
US11443941B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 28, 2021 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jan 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7624
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a silicon on insulator structure comprises: providing a bonded structure, the bonded structure comprises the first substrate, the second substrate and the insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a first film; at a first temperature, performing a first etching to etch the first film to remove a first thickness of the first film; at a second temperature, performing a second etching to etch the first film to planarize the first film and remove a second thickness of the first film, the first temperature being lower than the second temperature, the first thickness being greater than the second thickness, and a sum of the first thickness and the second thickness being a total etching thickness of the first film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.