Electronic device for ESD protection
US11444077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Nov 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.