Vertical non-volatile memory devices and methods of programming the same
US11444098B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Apr 16, 2020 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Jul 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A vertical non-volatile memory device includes a channel on a substrate and extending in a first direction perpendicular to an upper surface of the substrate, a first charge storage structure on an outer sidewall of the channel, a second charge storage structure on an inner sidewall of the channel, first gate electrodes spaced apart from each other in the first direction on the substrate, each which surrounds the first charge storage structure, and a second gate electrode on an inner sidewall of the second charge storage structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.