Method and apparatus for a thin film dielectric stack
US11444150B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Dec 11, 2020 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.