Patent · US Active

Channel structure having tunneling layer with adjusted nitrogen weight percent and methods for forming the same

US11444163B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Song Liu · San Jose, US
Chao Shen · Richmond, CA
Dejian Chen · 红钢城街道, CN
Wenting Wang · Norcross, US
Xinxin Huang · 流花街道, CN
Zhiping Xu · Ningbo City, CN

Key dates

Filing date	Apr 28, 2020
Grant date	Sep 13, 2022
Priority date	—
Expiry date	Apr 28, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/693
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of memory devices and fabrication methods thereof are disclosed. In an example, a memory device includes a substrate, a memory stack, and a channel structure. The memory stack includes interleaved conductor layers and dielectric layers over the substrate. The channel structure extends through the memory stack into the substrate and includes a functional layer that includes a tunneling layer of which a nitrogen weight percent is not greater than about 28%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.