Power photodiode structures, methods of making, and methods of use
US11444216B2 · kind B2 · utility
1Cited by
11References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 2020 |
| Grant date | Sep 13, 2022 |
| Priority date | — |
| Expiry date | Sep 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/488
Abstract
According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.