Method and device for determining junction temperature of die of semiconductor power module
US11448557B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2017 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K2217/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining the junction temperature of at least one die of a semiconductor power module, the semiconductor power module being composed of plural dies connected in parallel and switching between conducting and non conductor states according to pattern cycles, the method comprises the steps of: disabling the conducting of the at least one die during at least a fraction of one switching cycle, applying a current limited voltage to the gate of the at least one die during a period of time of the cycle wherein the at least one die is not conducting, the resulting voltage excursion having a value that does not enable the die to be conducting, measuring the voltage at the gate of the die, deriving from the measured voltage a temperature variation of the junction of the at least one die or the temperature of the junction of the die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.