Patent · US Active

Devices with semiconductor hyperbolic metamaterials

US11448824B2 · kind B2 · utility

0Cited by

5References

18Claims

0Family size

Assignee

The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventor

Michael A. Mastro · Fairfax, US

Key dates

Filing date	Mar 21, 2016
Grant date	Sep 20, 2022
Priority date	—
Expiry date	Dec 11, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/32341
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.