Michael A. Mastro
20Patents
5h-index
24Co-inventors
69Inventor score
Filing activity: Aug 5, 2003 → Sep 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7928471B2 | Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor | Emerging Cross-Sectional Technologies | 17 | Active |
| US8384129B2 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Electricity | 13 | Active |
| US8900939B2 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Electricity | 11 | Active |
| US8653550B2 | Inverted light emitting diode having plasmonically enhanced emission | Electricity | 11 | Active |
| US6906351B2 | Group III-nitride growth on Si substrate using oxynitride interlayer | Electricity | 10 | Expired |
| US8445383B2 | Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices | Electricity | 5 | Active |
| US8254086B2 | Two-step synthesis of manganese oxide nanostructures on carbon for supercapacitor applications | Emerging Cross-Sectional Technologies | 5 | Active |
| US8779456B2 | Inverted light-emitting diode having plasmonically enhanced emission | Electricity | 4 | Active |
| US8648390B2 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Electricity | 4 | Active |
| US9111786B1 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Electricity | 3 | Active |
| US8237152B2 | White light emitting device based on polariton laser | Electricity | 2 | Active |
| US9018056B2 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Electricity | 2 | Active |
| US7790230B2 | Metal chloride seeded growth of electronic and optical materials | Chemistry; Metallurgy | 1 | Active |
| US11996840B1 | Light controlled switch module | Electricity | 1 | Active |
| US9105499B1 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Electricity | 0 | Active |
| US11448824B2 | Devices with semiconductor hyperbolic metamaterials | Electricity | 0 | Active |
| US10494738B2 | Growth of crystalline materials on two-dimensional inert materials | Chemistry; Metallurgy | 0 | Active |
| US10266963B2 | Growth of crystalline materials on two-dimensional inert materials | Chemistry; Metallurgy | 0 | Active |
| US12376388B2 | Low resistance photoconductive semiconductor switch (PCSS) | Electricity | 0 | Active |
| US12243916B2 | Polarization-engineered heterogeneous semiconductor heterostructures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.