Pattern enhancement using a gas cluster ion beam

US11450506B2 · kind B2 · utility

Assignee

• TEL MANUFACTURING AND ENGINEERING OF AMERICA, INC. · US

Inventors

• Kazuya Dobashi · Nirasaki, JP
• Hiromitsu Kambara · Austin, US
• Masaru Nishino · Hillsboro, US
• Reo Kosaka · Hillsboro, US
• Matthew C. Gwinn · Salem, US
• Luis Fernandez · Leuven, BE
• Kenichi Oyama · Tokyo, JP
• Sakurako Natori · Yamanashi, JP
• Noriaki Okabe · Tokyo, JP

Key dates

• Filing date: Sep 11, 2020
• Grant date: Sep 20, 2022
• Expiry date: Sep 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/20228
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of processing a substrate includes loading the substrate on a substrate holder. The substrate includes a major surface and a feature disposed over the major surface. The feature has a first width along an etch direction. The method includes exposing portions of the major surface and changing the first width of the feature to a second width along the etch direction by etching a first portion of the sidewalls of the feature with a gas cluster ion beam oriented along a beam direction.