Patent · US Active

Substrate processing apparatus and method of manufacturing semiconductor device

US11450536B2 · kind B2 · utility

1Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 2021
Grant dateSep 20, 2022
Priority date
Expiry dateMar 25, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.