Package structure of semiconductor device with improved bonding between the substrates
US11450633B2 · kind B2 · utility
3Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2020 |
| Grant date | Sep 20, 2022 |
| Priority date | — |
| Expiry date | Feb 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A package structure of a semiconductor device includes a first substrate, a second substrate, and a bonding layer. The bonding layer bonds the first substrate and the second substrate. The bonding layer includes an inner bonding pad pattern and an outer bonding pad pattern formed in a dielectric layer. The outer bonding pad pattern surrounds the inner bonding pad pattern. A first bonding pad density of the outer bonding pad pattern is greater than a second bonding pad density of the inner bonding pad pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.