Germanium-rich nanowire transistor with relaxed buffer layer

US11450739B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Glenn A. Glass · Portland, US
• Anand S. Murthy · Beaverton, US
• Cory Bomberger · Portland, US
• Tahir Ghani · Portland, US
• Jack T. Kavalieros · Portland, US
• Siddharth Chouksey · Portland, US
• Seung Hoon Sung · Beaverton, US
• Biswajeet Guha · Hillsboro, US
• Ashish Agrawal · Hillsboro, US

Key dates

• Filing date: Sep 14, 2018
• Grant date: Sep 20, 2022
• Expiry date: Jan 21, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor structure has a substrate including silicon and a layer of relaxed buffer material on the substrate with a thickness no greater than 300 nm. The buffer material comprises silicon and germanium with a germanium concentration from 20 to 45 atomic percent. A source and a drain are on top of the buffer material. A body extends between the source and drain, where the body is monocrystalline semiconductor material comprising silicon and germanium with a germanium concentration of at least 30 atomic percent. A gate structure is wrapped around the body.