Ag-doped photovoltaic devices and method of making

US11450778B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Kenneth M. Ring · Waterville, US
• William Hullinger Huber · Scotia, US
• Hongying Peng · Niskayuna, US
• Markus Gloeckler · Perrysburg, US
• Gopal Mor · Perrysburg, US
• Feng Liao · Perrysburg, US
• Zhibo Zhao · Ann Arbor, US
• Andrei Los · Perrysburg, US

Key dates

• Filing date: May 31, 2017
• Grant date: Sep 20, 2022
• Expiry date: Jun 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1237

Abstract

A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.