Kenneth M. Ring
16Patents
5h-index
28Co-inventors
62Inventor score
Filing activity: Feb 21, 2003 → Oct 25, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10529883B2 | Photovoltaic devices and method of manufacturing | Emerging Cross-Sectional Technologies | 22 | Active |
| US10461207B2 | Photovoltaic devices and method of manufacturing | Emerging Cross-Sectional Technologies | 14 | Active |
| US6933202B1 | Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure | Electricity | 8 | Expired |
| US6797580B1 | Method for fabricating a bipolar transistor in a BiCMOS process and related structure | Electricity | 7 | Expired |
| US11450778B2 | Ag-doped photovoltaic devices and method of making | Electricity | 6 | Active |
| US11817516B2 | Photovoltaic devices and method of manufacturing | Emerging Cross-Sectional Technologies | 5 | Active |
| US7291536B1 | Fabricating a self-aligned bipolar transistor having increased manufacturability | Electricity | 5 | Expired |
| US8497151B2 | Photovoltaic device | Emerging Cross-Sectional Technologies | 2 | Active |
| US8785232B2 | Photovoltaic device | Emerging Cross-Sectional Technologies | 2 | Active |
| US7268038B2 | Method for fabricating a MIM capacitor having increased capacitance density and related structure | Electricity | 1 | Expired |
| US7064415B1 | Self-aligned bipolar transistor having increased manufacturability | Electricity | 1 | Expired |
| US7541231B1 | Integration of SiGe NPN and vertical PNP devices on a substrate | Electricity | 0 | Active |
| US9006020B2 | Method and system of providing dopant concentration control in different layers of a semiconductor device | Emerging Cross-Sectional Technologies | 0 | Active |
| US7863148B2 | Method for integrating SiGe NPN and vertical PNP devices | Electricity | 0 | Active |
| US7994611B1 | Bipolar transistor fabricated in a biCMOS process | Electricity | 0 | Expired |
| US6979626B2 | Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.