Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
US11453956B2 · kind B2 · utility
1Cited by
93References
29Claims
0Family size
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Key dates
| Filing date | Aug 26, 2019 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Dec 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.