Variable implant and wafer-level feed-forward for dopant dose optimization
US11455452B2 · kind B2 · utility
0Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2020 |
| Grant date | Sep 27, 2022 |
| Priority date | — |
| Expiry date | Jul 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for adjusting implant parameter conditions in semiconductor processing by wafer and by wafer zone using in-line measurements from previous operations and a feed-forward computer model. The feed-forward model is based on a sensitivity map of in-line measured data and its effect of electrical performance. Feed-forward computer models that adjust implant parameters by wafer and by zone improve both wafer-to-wafer and within wafer electrical uniformity in semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.