Alwin Tsao
25Patents
9h-index
36Co-inventors
75Inventor score
Filing activity: Dec 8, 1998 → Jul 31, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8067279B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 114 | Active |
| US7141480B2 | Tri-gate low power device and method for manufacturing the same | Electricity | 43 | Expired |
| US6143594A | On-chip ESD protection in dual voltage CMOS | Electricity | 26 | Expired |
| US6162728A | Method to optimize copper chemical-mechanical polishing in a copper damascene interconnect process for integrated circuit applications | Electricity | 20 | Expired |
| US6693357B1 | Methods and semiconductor devices with wiring layer fill structures to improve planarization uniformity | Electricity | 17 | Expired |
| US6137144A | On-chip ESD protection in dual voltage CMOS | Electricity | 16 | Expired |
| US7274046B2 | Tri-gate low power device and method for manufacturing the same | Electricity | 11 | Expired |
| US7250334B2 | Metal insulator metal (MIM) capacitor fabrication with sidewall spacers and aluminum cap (ALCAP) top electrode | Electricity | 10 | Expired |
| US6211769A | System to minimize the temperature coefficient of resistance of passive resistors in an integrated circuit process flow | Electricity | 10 | Expired |
| US7045436B2 | Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI) | Electricity | 9 | Expired |
| US7193277B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 4 | Expired |
| US6333238A | Method for minimizing the temperature coefficient of resistance of passive resistors in an integrated circuit process flow | Electricity | 4 | Expired |
| US7141468B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 3 | Expired |
| US9202859B1 | Well resistors and polysilicon resistors | Electricity | 2 | Active |
| US7314800B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 2 | Expired |
| US9245755B2 | Deep collector vertical bipolar transistor with enhanced gain | Electricity | 1 | Active |
| US7662688B2 | Application of different isolation schemes for logic and embedded memory | Electricity | 1 | Active |
| US9431248B2 | High tilt angle plus twist drain extension implant for CHC lifetime improvement | Electricity | 0 | Active |
| US8753938B2 | Method for 1/F noise reduction in NMOS devices | Electricity | 0 | Active |
| US9397164B2 | Deep collector vertical bipolar transistor with enhanced gain | Electricity | 0 | Active |
| US9379176B2 | Well resistors and polysilicon resistors | Electricity | 0 | Active |
| US11455452B2 | Variable implant and wafer-level feed-forward for dopant dose optimization | Electricity | 0 | Active |
| US7199011B2 | Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbon | Electricity | 0 | Expired |
| US8653607B2 | Method for 1/F noise reduction in NMOS devices | Electricity | 0 | Active |
| US9177802B2 | High tilt angle plus twist drain extension implant for CHC lifetime improvement | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.