Patent · US Active

Semiconductor device and fabrication method for the same

US11456247B2 · kind B2 · utility

0Cited by
5References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 13, 2019
Grant dateSep 27, 2022
Priority date
Expiry dateOct 20, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/585
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A reliable semiconductor device is provided. The semiconductor device includes at least one die. The at least one die includes an integrated circuit region, a first recess region surrounding the integrated circuit region, and a second recess region surrounding the first recess region. A first recess is disposed in the first recess region and a second recess is disposed in the second recess region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.