Drain-extended transistor

US11456381B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Meng-Chia Lee · Tyhee, US
• Sunglyong Kim · Allen, US
• Seetharaman Sridhar · Richardson, US
• Sameer Pendharkar · Allen, US

Key dates

• Filing date: Dec 16, 2020
• Grant date: Sep 27, 2022
• Expiry date: Dec 16, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

Described examples include an integrated circuit having a semiconductor substrate. The integrated circuit has a transistor that includes a buried layer having within the substrate, the buried layer defining a drift region between the buried layer and the top surface and a body region in the substrate extending from the buried layer to the surface of the substrate. The transistor also having a source formed in the body region, a drain extending from the buried layer to the surface of the substrate, a drift well extending from the buried layer toward the top surface and extending from the body region to the drain, a drift surface layer located between the drift well and the top, and a gate proximate to the surface of the substrate at the body region.