Inventor · Allen, TX, US

Sameer Pendharkar

231Patents
14h-index
88Co-inventors
89Inventor score

Filing activity: Nov 20, 1998 → Aug 17, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6424005B1 LDMOS power device with oversized dwell Electricity 94 Expired
US6211552A Resurf LDMOS device with deep drain region Electricity 69 Expired
US7187033B2 Drain-extended MOS transistors with diode clamp and methods for making the same Electricity 56 Expired
US6395593B1 Method of manufacturing high side and low side guard rings for lowest parasitic performance in an H-bridge configuration Electricity 54 Expired
US6441431B1 Lateral double diffused metal oxide semiconductor device Electricity 43 Expired
US6160290A Reduced surface field device having an extended field plate and method for forming the same Electricity 28 Expired
US8759879B1 RESURF III-nitride HEMTs Electricity 21 Active
US6919603B2 Efficient protection structure for reverse pin-to-pin electrostatic discharge Electricity 20 Expired
US8890248B2 Bi-directional ESD protection circuit Electricity 20 Active
US8264038B2 Buried floating layer structure for improved breakdown Electricity 18 Active
US7427795B2 Drain-extended MOS transistors and methods for making the same Electricity 18 Expired
US7235451B2 Drain extended MOS devices with self-aligned floating region and fabrication methods therefor Electricity 17 Expired
US7238986B2 Robust DEMOS transistors and method for making the same Electricity 16 Expired
US6468837B1 Reduced surface field device having an extended field plate and method for forming the same Electricity 14 Expired
US9865729B1 Laterally diffused metal oxide semiconductor with segmented gate oxide Electricity 13 Active
US7135759B2 Individualized low parasitic power distribution lines deposited over active integrated circuits Electricity 13 Expired
US6225673A Integrated circuit which minimizes parasitic action in a switching transistor pair Electricity 12 Expired
US7745294B2 Methods of manufacturing trench isolated drain extended MOS (demos) transistors and integrated circuits therefrom Electricity 12 Active
US8253193B2 MOS transistor with gate trench adjacent to drain extension field insulation Electricity 12 Active
US7414287B2 System and method for making a LDMOS device with electrostatic discharge protection Electricity 10 Expired
US6624481B1 ESD robust bipolar transistor with high variable trigger and sustaining voltages Electricity 10 Expired
US7005354B2 Depletion drain-extended MOS transistors and methods for making the same Electricity 10 Expired
US7713825B2 LDMOS transistor double diffused region formation process Electricity 10 Active
US7045903B2 Integrated power circuits with distributed bonding and current flow Electricity 10 Expired
US9685545B2 Isolated III-N semiconductor devices Electricity 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.