Normally-off gallium oxide field-effect transistor structure and preparation method therefor

US11456387B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Yuanjie Lv · Shijiazhuang, CN
• Yuangang Wang · Nanhu, CN
• Xingye Zhou · Shijiazhuang, CN
• Xin Tan · Beijing, CN
• Xubo Song · Shijiazhuang, CN
• Shixiong Liang · Sichuan, CN
• Zhihong Feng · Shijiazhuang, CN

Key dates

• Filing date: Oct 1, 2020
• Grant date: Sep 27, 2022
• Expiry date: Nov 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure provides a normally-off gallium oxide field-effect transistor structure and a preparation method therefor, and relates to the technical field of semiconductor device. The normally-off gallium oxide field-effect transistor structure comprises a substrate layer and an n-type doped gallium oxide channel layer from bottom to top. The n-type doped gallium oxide channel layer is provided with a source, a drain, and a gate. The gate is located between the source and the drain. A no-electron channel region is provided in the n-type doped gallium oxide channel layer located below the gate.