Advanced memory structure and device
US11462264B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Sep 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory devices and methods are provided. In one aspect, a memory device may comprise a first field element, a second field element, a movable magnetic element, and a first heater. The first field element may be a superconductor. The second field element may be disposed facing the first field element and at a first distance from the first field element. The movable magnetic element may be repelled by the second field element and disposed in a space between the first field element and the second field element. The first heater may be arranged near the first field element. The movable magnetic element may move toward the first field element in response to a first electric current that passes through the first heater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.