Physical vapor deposition apparatus and method thereof
US11462394B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Sep 16, 2019 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Dec 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A PVD method includes tilting a first magnetic element over a back side of a target. The first magnetic element is moved about an axis that extends through the target. Then, charged ions are attracted to bombard the target, such that particles are ejected from the target and are deposited over a surface of a wafer. By tilting the magnetic element relative to the target, the distribution of the magnetic fields can be more random and uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.