Ultrawide bandgap semiconductor devices including magnesium germanium oxides
US11462400B1 · kind B1 · utility
12Cited by
12References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2022 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Feb 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.