Semiconductor device package having galvanic isolation and method therefor
US11462494B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Sep 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device package having galvanic isolation is provided. The semiconductor device package includes a package substrate having a first inductive coil. A first semiconductor die is attached to a first major surface of the package substrate. The first semiconductor die includes a second inductive coil substantially aligned with the first inductive coil. A second semiconductor die is attached to the first major surface of the package substrate. A wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.