SRAM structure
US11462550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An SRAM structure includes first and second gate strips extending along a first direction. A first active region extends across the first gate strip from a top view, and forms a first pull-up transistor with the first gate strip. A second active region extends across the second gate strip from the top view, and forms a second pull-up transistor with the second gate strip. From the top view the first active region has a first stepped sidewall facing away from the second active region. The first stepped sidewall has a first side surface farthest from the second active region, a second side surface set back from the first side surface along the first direction, and a third side surface set back from the second side surface along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.