Lateral bipolar junction transistor device and method of making such a device

US11462632B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Arkadiusz Malinowski · Malta, US
• Alexander M. Derrickson · Troy, US
• Ali Razavieh · Saratoga Springs, US
• Halting Wang · Clifton Park, US

Key dates

• Filing date: Dec 22, 2020
• Grant date: Oct 4, 2022
• Expiry date: Jan 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/645

Abstract

A non-uniform base width bipolar junction transistor (BJT) device includes: a semiconductor substrate, the semiconductor substrate having an upper surface; and a BJT device, the BJT device comprising a collector region, a base region, and an emitter region positioned in the semiconductor substrate, the base region being positioned between the collector region and the emitter region; the base region comprising a top surface and a bottom surface, wherein a first width of the top surface of the base region in a base width direction of the BJT device is greater than a second width of the bottom surface of the base region in the base width direction of the BJT device.