Niobium compound and method of forming thin film
US11466043B2 · kind B2 · utility
0Cited by
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17Claims
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Key dates
| Filing date | May 22, 2020 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Dec 23, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.