Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer
US11466383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Sep 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D≤r≤37D [Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.