Microwave plasma chemical vapor deposition device and application thereof
US11469077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2019 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Oct 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A microwave plasma chemical vapor deposition device for diamond synthesis. A microwave source generates a microwave signal, and a resonant cavity receives a plurality of process gases. The microwave signal is spread in a first mode at a first waveguide. A mode conversion antenna converts the first mode of the microwave signal into a second mode that is spread at a second waveguide. A coupling conversion cavity receives and transmits the microwave signal in the second mode to the mode conversion antenna thereby converting the second mode of the microwave signal into a third mode. A medium viewport receives the microwave signal in the third mode and transmits to the resonant cavity which enables the microwave signal to excite and discharge the process gases to form spherical plasma, carbon containing groups and atomic hydrogen thereby depositing a diamond film on a seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.