Inventor · Orlando, FL, US

Yi Ma

73Patents
19h-index
110Co-inventors
87Inventor score

Filing activity: Mar 12, 1992 → May 4, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6152987A Hydrogen gas-extraction module and method of fabrication Emerging Cross-Sectional Technologies 339 Expired
US6025280A Use of SiD.sub.4 for deposition of ultra thin and controllable oxides Electricity 152 Expired
US5940736A Method for forming a high quality ultrathin gate oxide layer Electricity 144 Expired
US6246095A System and method for forming a uniform thin gate oxide layer Electricity 132 Expired
US6011404A System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor Electricity 96 Expired
US6162711A In-situ boron doped polysilicon with dual layer and dual grain structure for use in integrated circuits manufacturing Electricity 75 Expired
US6320238A Gate structure for integrated circuit fabrication Electricity 73 Expired
US7910446B2 Integrated scheme for forming inter-poly dielectrics for non-volatile memory devices Electricity 40 Active
US5960302A Method of making a dielectric for an integrated circuit Electricity 39 Expired
US8043907B2 Atomic layer deposition processes for non-volatile memory devices Electricity 38 Active
US5258339A Formation of zeolite membranes from sols Performing Operations; Transporting 37 Expired
US7175694B2 Composite gas separation modules having intermediate porous metal layers Chemistry; Metallurgy 34 Expired
US6207586A Oxide/nitride stacked gate dielectric and associated methods Electricity 33 Expired
US6509242B2 Heterojunction bipolar transistor Electricity 29 Expired
US5908312A Semiconductor device fabrication Electricity 27 Expired
US6518622B1 Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor Electricity 21 Expired
US6274490A Method of manufacturing semiconductor devices having high pressure anneal Electricity 21 Expired
US5814562A Process for semiconductor device fabrication Emerging Cross-Sectional Technologies 21 Expired
US8426839B1 Conducting bridge random access memory (CBRAM) device structures Electricity 19 Active
US7659158B2 Atomic layer deposition processes for non-volatile memory devices Electricity 18 Active
US6548854B1 Compound, high-K, gate and capacitor insulator layer Electricity 18 Expired
US6417570B1 Layered dielectric film structure suitable for gate dielectric application in sub-0.25 &mgr;m technologies Electricity 17 Expired
US7078302B2 Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal Electricity 17 Expired
US5846871A Integrated circuit fabrication Electricity 16 Expired
US5981403A Layered silicon nitride deposition process Electricity 15 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.