Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientation

US11469225B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Mark D. Levy · Williston, US
• Jeonghyun Hwang · Ithaca, US
• Siva P. Adusumilli · South Burlington, US

Key dates

• Filing date: Oct 16, 2020
• Grant date: Oct 11, 2022
• Expiry date: Oct 16, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

Structures including devices, such as transistors, integrated on a bulk semiconductor substrate and methods of forming a structure including devices, such as transistors, integrated on a bulk semiconductor substrate. The bulk semiconductor substrate contains a single-crystal semiconductor material having a diamond crystal lattice structure and a <111> crystal orientation. A first transistor is formed in a first device region of the bulk semiconductor substrate, and a second transistor is formed in a second device region of the bulk semiconductor substrate. The second transistor includes a layer stack on the bulk semiconductor substrate, and the layer stack includes a layer comprised of a III-V compound semiconductor material.