Patent · US Active

Memory device and hybrid spacer thereof

US11469240B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Liheng Liu · 红钢城街道, CN
Chuan Yang · Chongqing, CN
Shuangshuang Peng · 红钢城街道, CN

Key dates

Filing date	Jun 1, 2020
Grant date	Oct 11, 2022
Priority date	—
Expiry date	Jun 1, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/35
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a metal layer and a spacer arranged adjacent to the metal layer. The spacer includes a composite-dielectric layer including a composite-dielectric material. A composition of the composite-dielectric material is a mixture of a composition of a first dielectric material and a composition of a second dielectric material different from the first dielectric material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.